Study on a platinum-silicon carbide Schottky diode as a hydrogen gas sensor

Sensors and Actuators, B: Chemical

Volumn 66, Issue 1, 2000, Pages 116-118

  Kim, C K ^a   Lee, J H ^a   Lee, Y H ^a   Cho, N I ^b   Kim, D J ^c  

^a Soonchunhyang University   (South Korea)

^b SunMoon University   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GAS ADSORPTION; HYDROGEN; PLATINUM; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; THERMAL EFFECTS; THERMIONIC EMISSION;

HYDROGEN GAS SENSORS;

CHEMICAL SENSORS;

EID: 0033724158     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00321-X     Document Type: Article

References (5)

1. Lundstrom I., Shivaraman M.S., Svensson C., Lundkvist L. Hydrogen sensitive MOS field-effect transistor. Appl. Phys. Lett. 26:1975;55-57.
2. Arbab A., Spetz A., Lundstrom I. Gas sensors for high temperature based on metal-oxide-silicon carbide (MOSiC) devices. Sens. Actuators, B. 15-16:1993;19-23.
3. Kang W.P., Gurbuz Y., Davidson J.L., Kerns D.V. A new hydrogen sensor using a polycrystalline diamond-based Schottky diode. J. Electrochem. Soc. 141:1994;2231-2234.
4. Sze S.M. Physics of Semiconductor Physics. 1981;Wiley-Interscience, New York.
5. Lundstrom I., Svenson C. Solid State Chem. Sens. 29:1985;. Academic Press.