Work function changes in gas sensitive materials: Fundamentals and applications

Sensors and Actuators, B: Chemical

Volumn 142, Issue 2, 2009, Pages 470-493

  Oprea, Alexandru ^a   Bârsan, Nicolae ^a   Weimar, Udo ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

Field effect; Gas sensing; Work function

Indexed keywords

FIELD EFFECTS; GAS SENSING; GAS SENSING MATERIAL; GAS SENSITIVE MATERIAL; HISTORICAL PERSPECTIVE; WORK FUNCTION CHANGE;

GAS DETECTORS; WORK FUNCTION;

GASES;

EID: 71849112060     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.06.043     Document Type: Article

References (104)

1. Lundström I., Shivaraman S., Svenson C., and Lundkvist L. A hydrogen-sensitive MOS field-effect transistor. Applied Physics Letters 26 (1974) 55-57
2. A. Volta, Communication at the French Academy as documented by Kelvin, 1801.
3. Thompson W., and Lord K. Contact Electricity of Metals. Philosophical Magazine 46 (1898) 82-120
4. Carvallo T. Nicholson's Journal 1 (1802) 184
5. C.H. Pfaff, A. De Chim, taken from Kelvin XLI, 236.
6. Erskine-Murray J.R. On the Volta electricity of metals. Proceedings of the Royal Society 45 (1898) 398
7. In: Aswal D.K., and Gupta S.K. (Eds). Science and Technology of Chemiresistor Gas Sensors (2007), Nova Science Publishers, Inc, New York
8. Einstein A. Über einen die Erzeugung und Verwandlung des Lichtes betreffenden heuristischen Gesichtspunkt. Annalen der Physik 17 (1905) 132
9. Sommerfeld A., and Bethe H. Elektronentheorie der metalle. In: Geiger H., and Scheel K. (Eds). Editors Handbuch der Physik (1933), Springer 333-622
10. Ashcroft N.W., and Mermin N.D. Solid State Physics (1976), Saunders College p. 826
11. Zisman W.A. A new method of measuring contact potential differences in metals. Review of Scientific Instruments 3 (1932) 367-369
12. Innes P.D. On the velocity of the cathode particles. Proceedings of the Royal Society of London 79 (1907) 442
13. Turner D.W., and Al-Joboury M.L. Journal of Chemical Physics 37 (1962) 3007
14. J.E. Lilienfeld, Method and apparatus for controlling electric current, 1925.
15. O. Heil, Improvements in or relating to electrical amplifiers and other control arrangements and devices, 1934, Great Britain.
16. Shockeley W., and Pearson G.L. Modulation of conductance of thin films of semi-conductors by surface charges. Physical Review 74 (1948) 232
17. D. Kahng, Electric field controlled semiconductor device, US Patent 3,102,230, USA (1963).
18. Sze S.M. Physics of Semiconductor Devices. 2nd ed. (1981), John Wiley & Sons, New York-Chichester-Brisbane-Toronto-Singapore p. 868
19. Bergveld P. New amplification method for depth recording. IEEE Transactions on Biomedical Engineering BME 15 (1968) 102-105
20. Bergveld P. Development of an ion-sensitive solid-state device for neurophysiological measurements. IEEE Transactions on Biomedical Engineering 17 (1970) 70-71
21. Bergveld P. Thirty years of ISFETOLOGY - What happened in the past 30 years and what may happen in the next 30 years. Sensors and Actuators B: Chemical 88 (2003) 1-20
22. J. Janata, Apparatus and method for measuring the concentration of components in fluids, US Patent 4,411,741, USA (1983).
23. Blackburn G.F., Levy M., and Janata J. Field-effect transistor sensitive to dipolar molecules. Applied Physics Letters 43 (1983) 700
24. Lundström K.I., Shivaraman M.S., and Svenson C.M. A hydrogen-sensitive Pd-gate MOS transistor. Journal of Applied Physics 46 (1975) 3876-3881
25. Kittel C. Introduction to Solid State Physics. 6th ed. (1986), John Wiley & Sons, New York-Chichester-Brisbane-Toronto-Singapore p. 646
26. Schottky W. Zur Halbleitertheorie der Sperrschicht- und Spitzengleichrichter. Zeitschrift für Physik A: Hadrons and Nuclei 113 (1939) 367-414
27. Morrison S.R. The Chemical Physics of Surfaces (1990), Plenum, New York
28. Aigrain P., and Dugas C. Adsorption sur les semi-conducteurs. Zeitschrift für Elektrochemie und angewandte Physikalische Chemie 56 (1952) 363-366
29. Engell H.J., and Hauffe K. Die Randschichttheorie der Chemisorption. Zeitschrift für Elektrochemie und angewandte Physikalische Chemie 57 (1953) 762-773
30. Hauffe K., and Engell H.J. Zum Mechanismus der Chemisorption vom Standpunkt der Fehlordnungstheorie. Zeitschrift für Elektrochemie und angewandte Physikalische Chemie 56 (1952) 366-373
31. Weisz P.B. Electronic barrier layer phenomena in chemisorption and catalysis. Journal of Chemical Physics 20 (1952) 1483-1484
32. Weisz P.B. Effects of electronic charge transfer between adsorbate and solid on chemisorbtion and catalysis. Journal of Chemical Physics 21 (1953) 1531-1539
33. Wolkenstein T. The Electron Theory of Catalysis on Semiconductors (1963), Pergamon Press, Oxford-New York
34. Wolkenstein T. In: Morrison R. (Ed). Electronic Processes on Semiconductor Surfaces During Chemisorption (1991), Consultants Bureau, New York 240
35. Heine V. Theory of surface states. Physical Review 138 (1965) A1689-A1696
36. Monch W. Metal-semiconductor contacts: electronic properties. Surface Science 299-300 (1994) 928-944
37. Surplice N.A., and D'Arcy R.J. A critique of the Kelvin method of measuring work functions. Journal of Physics E: Scientific Instruments 3 (1970) 477-482
38. 2 conductance-modulation carbon monoxide sensor. Journal of the Electrochemical Society 126 (1979) 627
39. Williams D.E. Semiconducting oxides as gas-sensitive resistors. Sensors and Actuators B: Chemical 57 (1999) 1-16
40. Geistlinger H. Electron theory of thin-film gas sensors. Sensor and Actuators B 17 (1993) 47-60
41. Barsan N., and Weimar U. Conduction model of metal oxide gas sensors. Journal of Electroceramics 7 (2001) 143-167
42. 2 sensors in the presence of humidity. Journal of Physics: Condensed Matter 15 (2003) R813-R839
43. Barsoukov E., and MacDonald J.R. Impedance Spectroscopy. 2nd ed. (2005), John Wiley & Sons, New York-Chichester-Brisbane-Toronto-Singapore p. 688
44. Gould R.D. Structure and electrical conduction properties of phthalocyanine thin films. Coordination Chemistry Reviews 156 (1996) 237-274
45. Wright J.D. Gas adsorption on phthalocyanines and its effects on electrical properties. Progress in Surface Science 31 (1989) 1-60
46. Fukuda H., Ise M., Kogure T., and Takano N. Gas sensors based on poly-3-hexylthiophene thin-film transistors. Thin Solid Films 464-65 (2004) 441-444
47. Fukuda H., Yamagishi Y., Ise M., and Takano N. Gas sensing properties of poly-3-hexylthiophene thin film transistors. Sensors and Actuators B: Chemical 108 (2005) 414-417
48. Liao F., Chen C., and Subramanian V. Organic TFTs as gas sensors for electronic nose applications. Sensors and Actuators B: Chemical 107 (2005) 849-855
49. Oprea A., Frerichs H.-P., Wilbertz C., Lehmann M., and Weimar U. Hybrid gas sensor platform based on capacitive coupled field effect transistors: ammonia and nitrogen dioxide detection. Sensors and Actuators B: Chemical 127 (2007) 161-167
50. 2 detection. Sensors and Actuators B: Chemical 118 (2006) 249-254
51. Andersson M., Holmberg M., LundstroÌ̂m I., Lloyd-Spetz A., MaÌŠrtensson P., Paolesse R., Falconi C., Proietti E., Di Natale C., and D'Amico A. Development of a ChemFET sensor with molecular films of porphyrins as sensitive layer. Sensors and Actuators B: Chemical 77 (2001) 567-571
52. D'Amico A., Di Natale C., Paolesse R., Macagnano A., and Mantini A. Metalloporphyrins as basic material for volatile sensitive sensors. Sensors and Actuators B: Chemical 65 (2000) 209-215
53. Meijerink M.G.H., Koudelka-Hep M., de Rooij N.F., Strike D.J., Hendrikse J., Olthuis W., and Bergveld P. Gas-dependent field effect transistor with an electrodeposited conducting polymer gate contact. Electrochemical and Solid State Letters 2 (1999) 138-139
54. Basova T.V., Kol'tsov E.K., and Igumenov I.K. Spectral investigation of interaction of copper phthalocyanine with nitrogen dioxide. Sensors and Actuators B: Chemical 105 (2005) 259-265
55. 2. 6 Dresdner Sensor Symposium. Dresden, Germany (2003) 165-168
56. Oprea A., Claußen J., Fietzek C., Harbeck M., Mack H.-G., and Weimar U. Bioanalytical and medical trends in sensor applications; organic layers for field effect application. Technology and Health Care, International Journal of Health Care Engineering 12 (2004) 139-142
57. 2 doping of copper phthalocyanine thin films. Journal of Electron Spectroscopy and Related Phenomena 137-140 (2004) 101-105
58. 3 Preparees Par Oxydation Posterieure De Metal Evapore 342 (1999) 238-243
59. Eisele I., Doll T., and Burgmair M. Low power gas detection with FET sensors. Sensors and Actuators B: Chemical 78 (2001) 19-25
60. Fleischer M., Simon E., Rumpel E., Ulmer H., Harbeck M., Wandel M., Fietzek C., Weimar U., and Meixner H. Detection of volatile compounds correlated to human diseases through breath analysis with chemical sensors. Sensors and Actuators B: Chemical 83 (2002) 245-249
61. Hoerter M., Oprea A., BaÌ,rsan N., and Weimar U. Kelvin probe measurements of polymer coated gold substrates: mechanism studies. Sensors and Actuators B: Chemical 134 (2008) 266-272
62. Oprea A., Barsan N., and Weimar U. Ammonia detection mechanism with polyacrylic acid sensitive layers: field effect transduction. Sensors and Actuators B: Chemical 111 (2005) 577-581
63. Oprea A., Simon E., Fleischer M., Frerichs H.P., Wilbertz C., Lehmann M., and Weimar U. Flip-chip suspended gate field effect transistors for ammonia detection. Sensors and Actuators B: Chemical 111 (2005) 582-586
64. Oprea A., and Weimar U. High sensitivity polyacrylic acid films for ammonia detection with field effect devices. Sensors and Actuators B: Chemical 111 (2005) 572-576
65. Hoerter M., Oprea A., BaÌ,rsan N., and Weimar U. Chemical interaction of gaseous ammonia and water vapour with polyacrylic acid layers. Sensors and Actuators B: Chemical 134 (2008) 743-749
66. Sahm M., Oprea A., Barsan N., and Weimar U. Interdependence of ammonia and water sorption in polyacrylic acid layers. Sensors and Actuators B: Chemical 130 (2008) 502-507
67. Doll T., Lechner J., Eisele I., Schierbaum K.D., and GoÌ̂pel W. Ozone detection in the ppb range with work function sensors operating at room temperature. Sensors and Actuators B: Chemical 34 (1996) 506-510
68. Atkins P.W. Physical Chemistry. 4th ed. (1990), Oxford University Press, Oxford-Melbourne-Tokyo p. 998
69. D'Arcy R.J., and Surplice N.A. The effects of stray capacitance on the Kelvin method for measuring contact potential difference. Journal of Physics D: Applied Physics 3 (1970) 482-488
70. Besocke K., and Berger S. Piezoelectric driven Kelvin probe for contact potential difference studies. Review of Scientific Instruments 47 (1976) 840-842
71. Baikie I.D., Mackenzie S., Estrup P.J.Z., and Meyer J.A. Noise and the Kelvin method. Review of Scientific Instruments 62 (1991) 1326-1332
72. Baikie I.D., Van Der Werf K.O., Oerbekke H., Broeze J., and Van Silfhout A. Automatic Kelvin probe compatible with ultrahigh vacuum. Review of Scientific Instruments 60 (1989) 930-934
73. Baikie I.D., Venderbosch E., Meyer J.A., and Estrup P.J.Z. Analysis of stray capacitance in the Kelvin method. Review of Scientific Instruments 62 (1991) 725-735
74. Pfeiffer M., Leo K., and Karl N. Fermi level determination in organic thin films by the Kelvin probe method. Journal of Applied Physics 80 (1996) 6880-6883
75. D'Amico A., Di Natale C., Paolesse R., Mantini A., Goletti C., Davide F., and Filosofi G. Chemical sensing materials characterization by Kelvin probe technique. Sensors and Actuators B: Chemical 70 (2000) 254-262
76. Lui K., Vest M., Berlowitz P., Akhter S., and Kung H.H. Desorption of Zn from ZnO single-crystal surfaces during temperature programmed decomposition of methanol, formic acid, and 2-propanol. Journal of Physical Chemistry 90 (1986) 3183-3187
77. Lundström I. Hydrogen sensitive MOS-structures. Part 1. Principles and applications. Sensors and Actuators 1 (1981) 403-426
78. Lundström I., and Söderberg D. Hydrogen sensitive MOS-structures. Part 2. Characterisation. Sensors and Actuators 2 (1981-1982) 105-138
79. Lundström I., Shivaraman M.S., and Svensson C. Chemical reactions on palladium surfaces studied with Pd-MOS structures. Surface Science 64 (1977) 497-519
80. T. Doll, B. Flietner, I. Eisele, Verfahren zum spacerfrein, hybriden Aufbau von Luftspalt und Gate von Suspended Gate Feldeffekttransistoren (SGFET) sowie nach dem Verfahren hergestellte Bauelemente, 1993, Germany.
81. Flietner B., Doll T., Lechner J., Leu M., and Eisele I. Reliable hybrid GasFETs for work-function measurements with arbitrary materials. Sensors and Actuators B 22 (1994) 109-113
82. Fleischer M., Ostrick B., Pohle R., Simon E., Meixner H., Bilger C., and Daeche F. Low-power gas sensors based on work-function measurement in low-cost hybrid flip-chip technology. Sensors and Actuators B: Chemical 80 (2001) 169-173
83. Gergintschew Z., Kornetzky P., and Schipanski D. The capacitively controlled field effect transistor (CCFET) as a new low power gas sensor. Sensors and Actuators B: Chemical 36 (1996) 285-289
84. 2 sensor surface. Sensor and Actuators 4 (1983) 397
85. Barsan N., Koziej D., and Weimar U. Metal oxide-based gas sensor research: How to?. Sensors and Actuators B: Chemical 121 (2007) 18-35
86. Bilic A., Reimers J.R., Hush N.S., and Hafner J. Adsorption of ammonia on the gold(1 1 1) surface. Journal of Chemical Physics 116 (2002) 8981-8987
87. Surplice N.A., and Brearley W. The adsorption of carbon monoxide, ammonia, and wet air on gold. Surface Science 52 (1975) 62-74
88. Wells R.L., and Fort T. Adsorption of water on clean gold by measurement of work function changes. Surface Science 32 (1972) 554-560
89. 2 gas sensors: a status report. Fresenius Journal of Analytical Chemistry 365 (1999) 287-304
90. Graf M., Gurlo A., Barsan N., Weimar U., and Hierlemann A. Microfabricated gas sensor systems with sensitive nanocrystalline metal-oxide films. Journal of Nanoparticle Research 8 (2006) 823-839
91. 3. Applied Physics Letters 85 (2004) 2280-2282
92. 3-based thick film sensors studied by conductance and work function change measurements. Sensors and Actuators B: Chemical 102 (2004) 291-298
93. 2 sensors. Thin Solid Films 171 (1989) 53-63
94. Sahm M., Oprea A., Ba?rsan N., and Weimar U. Water and ammonia influence on the conduction mechanisms in polyacrylic acid films. Sensors and Actuators B: Chemical 127 (2007) 204-209
95. Grate J.W., and Abraham M.H. Solubility interactions and the design of chemically selective sorbent coatings for chemical sensors and arrays. Sensors and Actuators B 3 (1991) 85-111
96. Ishii H., Sugiyama K., Ito E., and Seki K. Energy level alignment and interfacial electronic structures at organic/metal and organic/organic interfaces. Advanced Materials 11 (1999) 605-625
97. Nelson D.D., Fraser G.T., and Klemperer W. Does ammonia hydrogen bond?. Science 238 (1987) 1670-1674
98. Wilbertz C., Frerichs H.P., Freund I., and Lehmann M. Suspended-gate- and Lundstrom-FET integrated on a CMOS-chip. Sensors and Actuators A: Physical 123-124 (2005) 2-6
99. Yamaguchi T., Takisawa M., Kiwa T., Yamada H., and Tsukada K. Analysis of response mechanism of a proton-pumping gate FET hydrogen gas sensor in air. Sensors and Actuators B: Chemical 133 (2008) 538-542
100. Tobias P., Baranzahi A., Spetz A.L., Kordina O., Janzen E., and Lundström I. Fast chemical sensing with metal-insulator silicon carbide structures. IEEE Electron Device Letters 18 (1997) 287-289
101. 2 sensitive Au gate metal-oxide-semiconductor capacitors. Journal of Applied Physics 90 (2001) 1883-1886
102. 2 sensors with group 1 B metal gates. Sensors and Actuators B 81 (2001) 83-87
103. 2 sensor based on Au gate field effect devices. Sensors and Actuators B: Chemical 78 (2001) 195-201
104. Senft C., Iskra P., Eisele I., Wilbertz C., and Frerichs H.-P. Temperature controlled phase transition as a detection principle for gas FETs (TPT-FET). IEEE Sensors. Lecce, Italy (2008)