SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 85, Issue 3, 2004, Pages 416-418

Wide-range (0.33%-100%) 3C-SiC resistive hydrogen gas sensor development

(5) Fawcett, Timothy J a Wolan, John T a Myers, Rachael L a Walker, Jeremy a Saddow, Stephen E a

a UNIVERSITY OF SOUTH FLORIDA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION KINETICS; CHEMICAL STABILITIES; CURRENT FLOW; HYDROGEN GAS SENSORS; RESPONSE TIME ANALYSIS;

CARBON; CHEMICAL VAPOR DEPOSITION; DISSOCIATION; ELECTRIC RESISTANCE; ELECTRON ABSORPTION; EPITAXIAL GROWTH; EVAPORATION; FILM GROWTH; INTERFACES (MATERIALS); OHMIC CONTACTS; OXIDATION; PARAMETER ESTIMATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SURFACE PHENOMENA; THERMAL CONDUCTIVITY OF GASES;

CHEMICAL SENSORS;

EID: 4043057218 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1773935 Document Type: Article

Times cited : (30)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.