Improved sensing characteristics of MISiC Schottky-diode hydrogen sensor by using HfO2 as gate insulator

Microelectronics Reliability

Volumn 48, Issue 11-12, 2008, Pages 1780-1785

  Tang, W M ^a   Leung, C H ^a   Lai, P T ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CARBIDES; COMPUTER CONTROL SYSTEMS; HAFNIUM; HAFNIUM COMPOUNDS; HYDROGEN; METAL INSULATOR BOUNDARIES; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SILICON; SILICON COMPOUNDS;

GATE INSULATORS; HAFNIUM DIOXIDES; HEIGHT REDUCTIONS; HIGH-K DIELECTRICS; HYDROGEN CONCENTRATIONS; HYDROGEN EXPOSURES; HYDROGEN SENSORS; INSULATOR THICKNESSES; MEASUREMENT SYSTEMS; OXIDE LAYERS; POLARIZED HYDROGENS; RF-SPUTTERING; SCHOTTKY; SENSING CHARACTERISTICS; SENSING PROPERTIES; TRAPPED CHARGES;

NONMETALS;

EID: 55649087754     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.09.006     Document Type: Article

References (23)

1. Nuclear production of hydrogen, First information exchange meeting, Paris, France; 2-3 October 2002.
2. Lundstrom I., Shivaraman S., Svensson C., and Lundkvist L. A hydrogen- sensitive MOS field effect transistor. Appl Phys Lett 26 (1975) 55-57
3. Lundstrom I., Armgarth M., and Petersson L.-G. Physics with catalytic metal gate chemical sensors. CRC Crit Rev Sol State Mater Sci 15 2 (1989) 201-278
4. Spetz A.L., Tobias P., Baranzahi A., Martensson P., and Lundstrom I. Current status of silicon carbide based high-temperature gas sensors. IEEE Trans Elec Dev 46 3 (1999) 561-566
5. Kim C.K., Lee J.H., Lee Y.H., Chow N.I., and Kim D.J. A study on a platinum-silicon carbide Schottky diodes as a hydrogen gas sensor. Sensors Actuator B 66 (2000) 116-118
6. Lundstrom I., Shivaraman S., Svensson C., and Lundkvist L. A hydrogen-sensitive MOS field effect transistor. Appl Phys Lett 26 (1975) 55-57
7. Lundstrom K.I., Shivaraman M.S., and Svensson C.M. A hydrogen-sensitive Pd-gate MOS transistor. J Appl Phys 46 (1975) 3876-3881
8. Bergveld P. Development, operation, and application of the ion-sensitive field-effect transistor as a tool for electrophysiology. IEEE Trans Biomed Eng BME-19 (1972) 342-351
9. Steele M.C., Hile J.W., and MacIver B.A. Hydrogen-sensitive palladium gate MOS capacitors. J Appl Phys 47 (1976) 2537-2538
10. Steele M.C., and MacIver B.A. Palladium/cadmium-sulfide Schottky diodes for hydrogen detection. Appl Phys Lett 28 (1976) 687-688
11. Xu J.P., Lai P.T., Zhong D.G., and Chan C.L. Improved hydrogen- sensitive properties of MISiC Schottky Sensor with thin NO-Grown oxynitride as gate insulator. IEEE Elect Dev Lett 24 1 (2003) 13-15
12. Habraken F.H.P.M., and Kuiper A.E.T. Silicon nitride and oxynitride films by combined plasma and rapid-thermal processing. J Vac Sci Technol A 14 (1996) 3017
13. Ma T.P. Gate dielectric properties of silicon nitride films formed by jet vapor deposition. Appl Surf Sci 117/118 (1997) 259
14. DeCoster W., Brijs B., Bender H., Alay J., and Vandervorst W. RBS, AES, and XPS analysis of ion bean induced nitridation of Si and SiGe alloys. Vacuum 45 (1994) 389
15. Kobayashi H., Mizokuro T., Nakato Y., Yoneda K., and Todokoro Y. Nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact. Appl Phys Lett 71 (1997) 1978
16. 2 as gate insulator. In: 2007 international semiconductor device research symposium, Maryland; 2007.
17. Baranzanhi A., Lloyd Spetz A., and Lundstrom I. Reversible hydrogen annealing of metal-oxide-silicon carbide devices at high temperatures. Appl Phys Lett 67 (1995) 3203-3205
18. Spetz A.L., Tobias P., Baranzahi A., Martensson P., and Lundstrom I. Current status of silicon carbide based high-temperature gas sensors. IEEE Trans Elect Dev 46 (1999) 561-566
19. Ekedahl L.-G., Eriksson M., and Lundstrom I. Hydrogen sensing mechanisms of metal-insulator interfaces. Acc Chem Res 31 (1998) 249-256
20. Chau L.W., His-Jen P., et al. Hydrogen sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor. IEEE Trans Elect Dev 48 9 (2001) 1938-1944
21. 3 thin film. Mater Sci Eng (2000) 177-194
22. 2/SiC gas sensor. Sensors Actuators B 109 (2005) 120-125
23. Zhu W.J., Ma T.P., Tamagawa T., Kim J., and Di Y. Current transport in metal/hafnium oxide/silicon structure. IEEE Elect Dev Lett 23 (2002) 97-99