Interface states in high-temperature gas sensors based on silicon carbide

IEEE Sensors Journal

Volumn 3, Issue 5, 2003, Pages 543-547

  Tobias, Peter ^a   Golding, Brage ^a   Ghosh, Ruby N ^a  

^a MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

Gas sensor; Hydrogen; Interface states; Silicon carbide (SiC)

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELLIPSOMETRY; HIGH TEMPERATURE EFFECTS; HYDROGEN; INTERFACES (MATERIALS); OXIDATION; SILICA; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS;

BIAS VOLTAGE; CHARGED STATES; INTERFACE STATES; REDUCING GASES;

CHEMICAL SENSORS;

EID: 3042810377     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2003.817154     Document Type: Article

References (24)

1. A. L. Spetz, A. Baranzahi, P. Tobias, and I. Lundström, "High temperature sensors based on metal insulator silicon devices," Phys. Solid State, vol. 162, pp. 493-511, 1997.
2. V. I. Filippov, A. A. Vasilev, A. A. Terentev, W. Moritz, and U. Roth, "Sensor based on a Pt/LaF3/SiO2/SiC structure for the detection of chlorofluorocarbons," Tech. Phys., vol. 44, pp. 1334-1339, 1999.
3. A. Samman, S. Gebremariam, L. Rimai, X. Zhang, J. Hangas, and G. W. Auner, "Silicon-carbide MOS capacitors with laser-ablated Pt gate as combustible gas sensors," Sens. Actuators B, vol. 63, pp. 91-102, 2000.
4. G. W. Hunter, P. G. Neudeck, M. Gray, D. Androjna, L.-Y. Chien, R. W. Hoffman Jr., C. C. Liu, and Q. H. Wu, "SiC-based gas sensor development," Mater. Sci. Forum, vol. 338-342, pp. 1439-1422, 2000.
5. C. K. Kim, J. H. Lee, S. M. Choi, I. H. Noh, H. R. Kim, N. I. Cho, C. Hong, and G. E. Jang, "Pd and Pt SiC Schottky diodes for detection of H2 and CHh4 at high temperature," Sens. Actuators B, vol. 77, pp. 455-462, 2001.
6. 2 sensor based on Pt-I-SiC diode," Phys. Status Solidi A, vol. 185, pp. 33-38, 2001.
7. A. L. Spetz, L. Unéus, H. Svennningstorp, P. Tobias, L. G. Ekedahl, O. Larsson, A. Göras, S. Savage, C. Harris, P. Mårtensson, R. Wigren, P. Salomonsson, B. Häggendahl, P. Ljung, M. Mattsson, and I. Lundström, "SiC based field effect gas sensors for industrial applications," Phys. Status Solidi A, vol. 185, pp. 15-25, 2001.
8. R. N. Ghosh, P. Tobias, S. Ejakov, and B. Golding, "Interface states in high temperature gas sensing," Proc. IEEE Sensors, vol. 2, pp. 12-14, 2002.
9. I. Lundström and T. DiStefano, "Influence of hydrogen on Pt-SiO2-Si structures," Solid State Comm., vol. 19, pp. 871-875, 1976.
10. Cree Research Inc., Durham, NC, USA. [Online]www.cree.com
11. L. A. Lipkin and J. W. Palmour, "Improved oxidation procedures for reduced SiO2/SiC defects," J. Electron Mater., vol. 25, pp. 909-915, 1996.
12. E. D. Palik, Handbook of Optical Constants of Solids. London, U.K.: Academic, 1985.
13. Silverprint, Containing Silver Powder and Organic Solvents. Rockford, IL: GC Electronics.
14. "Model 82 - WIN Simultaneous C-V Measurements," Keithley Instruments, Inc., Cleveland, OH.
15. E. H. Nicollian and J. R. Brews, MOS Physics and Technology. New York: Wiley, 1982, p. 331.
16. M. K. Das, B. S. Um, and J. A. Cooper Jr., "Anomalously high density of interface states near the conduction band in SiO2/4H-SiC MOS devices," Mater. Sci. Forum, vol. 338-342, pp. 1069-1072, 2000.
17. H. Katsuta and R. B. McLellan, "Diffusivity, permeability and solubility of hydrogen in platinum," J. Phys. Chem. Solids, vol. 40, pp. 697-699, 1979.
18. Quick Reference Manual for Silicon Integrated Circuit Technology, W. E. Beadle, Ed., Wiley, New York, 1984, pp. 6-35.
19. J. Fogelberg, M. Eriksson, H. Dannetun, and L.-G. Petersson, "Kinetic modeling of hydrogen adsorption/absorption in thin films on hydrogen-sensitive field-effect devices: Observation of large hydrogen-induced dipoles at the Pd-SiO2 interface," J. Appl. Phys., vol. 78, p. 988, 1997.
20. R. F. Pierret, Field Effect Devices, 2nd ed. Reading, MA: Addison-Wesley, 1990, pp. 95-115.
21. E. H. Nicollian and J. R. Brews, MOS Physics and Technology. New York: Wiley, 1982, p. 293.
22. P. Tobias, P. Martensson, A. Goras, I. Lundström, and A. L. Spetz, "Moving gas outlets for the evaluation of fast gas sensors," Sens. Actuators B, vol. 58, pp. 389-393, 1999.
23. K. Fukuda, S. Suzuki, T. Tanaka, and K. Arai, "Reduction of interface state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing," Appl. Phys. Lett., vol. 76, pp. 1585-1587, 2000.
24. J. R. Williams, G. Y. Chung, and C. C. Tin, "Passivation of the 4H-SiC/SiO2 interface with nitric oxide," Mater. Sci. Forum, vol. 389-3, pp. 967-972, 2002.