Effects of insulator thickness on the sensing properties of MISiC Schottky-diode hydrogen sensor

Proceedings - 4th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2008

Volumn , Issue , 2008, Pages 171-174

  Tang, W M ^a   Leung, C H ^a   Lai, P T ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER CONTROL SYSTEMS; COMPUTER NETWORKS; ELECTRONICS ENGINEERING; HYDROGEN; METAL INSULATOR BOUNDARIES; NANOSTRUCTURED MATERIALS; SENSORS; SILICA; SILICON CARBIDE; TECHNICAL PRESENTATIONS;

ELECTRONIC DESIGNS; GATE INSULATORS; INTERNATIONAL SYMPOSIUM; SCHOTTKY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 50649096825     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DELTA.2008.28     Document Type: Conference Paper

References (20)

1. Nuclear Production of Hydrogen, First Information Exchange Meeting, Paris, France, 2-3 October 2002,
2. I. Lundstrom, S. Shivaraman, C. Svensson, and L. Lundkvist, "A hydrogen-sensitive MOS field effect transistor," Appl. Phys. Lett., vol. 26, pp. 55-57, 1975.
3. I. Lundstrom, M. Armgarth, L.-G. Petersson, "Physics with catalytic metal gate chemical sensors," CRC Crit. Rev. Sol, State Mater. Sci. vol. 15 (2), pp. 201-278, 1989.
4. A. L. Spetz, P. Tobias, A. Baranzahi, P. Martensson and I. Lundstrom, "Current status of silicon carbide based hightemperature gas sensors," IEEE Trans. Electron Devices, vol. 46 (3), pp. 561-566, 1999.
5. C.K. Kim, J.H. Lee, Y.H. Lee, N.I. Chow and D.J. Kim, "A study on a platinum-silicon carbide Schottky diodes as a hydrogen gas sensor," Sensors and Actuators B vol. 66, pp. 116-118, 2000.
6. I. Lundstrom, S. Shivaraman, C. Svensson, and L. Lundkvist, "A hydrogen-sensitive MOS field effect transistor," Appl. Phys. Lett., vol. 26, pp. 55-57, 1975.
7. K. I. Lundstrom, M.S. Shivaraman, and C. M. Svensson, "A hydrogen-sensitive Pd-gate MOS transistor," J. Appl. Phys., vol. 46, pp. 3876-3881, 1975.
8. P. Bergveld, "Development, operation, and application of the ion-sensitive field-effect transistor as a tool for electrophysiology," IEEE Trans. Biomed. Eng., vol. BME-19, pp. 342-351, 1972.
9. M. C. Steele, J. W. Hile, and B. A. Maclver, "Hydrogensensitive palladium gate MOS capacitors," J. Appl. Phys., vol. 47, pp. 2537-2538, 1976.
10. M. C. Steele and B. A. Maclver, "Palladium/cadmiumsulfide Schottky diodes for hydrogen detection," Appl. Phys. Lett., vol. 28, pp. 687-688, 1976.
11. A. L. Spetz, P. Tobias, L. Uneus, H. Svenningstorp and L.-G. Ekedahl, "High temperature catalytic metal field effect transistors for industrial application," Sensors and Actuators B, vol. 70, pp. 67-76, 2000.
12. F. H. P. M. Habraken and A. E. T. Kuiper, "Silicon Nitride and Oxynitride Films by Combined Plasma and Rapid-Thermal Processing," J. Vac. Sci. Technol. A vol. 14, p. 3017, 1996.
13. T. P. Ma, "Gate Dielectric Properties of Silicon Nitride Films Formed by Jet Vapor Deposition," Appl. Surf. Sci, vol. 117/118, p. 259, 1997.
14. W. DeCoster, B. Brijs, H. Bender, J. Alay, and W. Vandervorst, "RBS, AES, and XPS Analysis of Ion Bean Induced Nitridation of Si and SiGe Alloys," Vacuum vol. 45, p. 389, 1994.
15. H. Kobayashi, T. Mizokuro, Y. Nakato, K. Yoneda, and Y. Todokoro, "Nitridation of Silicon Oxide Layers by Nitrogen Plasma Generated by Low Energy Electron Impact," Appl. Phys. Lett. vol. 71, p. 1978, 1997.
16. L.-G. Ekedahl, M. Eriksson, I. Lundstrom, "Hydrogen sensing mechanisms of metal-insulator interfaces," Acc. Chem. Res. 31 (5), pp. 249-256, 1998.
17. 0.76 As high-electron-mobility transistor," Appl. Phys. Lett., vol. 86, no. 11, p. 112103, Mar. 2005.
18. 0.51P MOS Schottky diode hydrogen sensor," IEEE Trans. Electron Devices, vol. 23, no. 11, pp. 640-642, Nov. 2002.
19. 3 thin film," Material Science and Engineering, pp. 177-194, 2000.
20. L. W. Chau, Pan His-Jen, et al., "Hydrogen Sensitive Characteristics of a Novel Pd/InP MOS Schottky Diode Hydrogen Sensor," IEEE Trans. Electron Devices, vol. 48, No. 9, pp. 1938-1944, 2001.