Benefits of high-k dielectrics in 4H-SiC trench MOSFETs

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1433-1436

  Wright, N G ^a   Poolamai, N ^a   Vassilevski, K V ^a   Horsfall, A B ^a   Johnson, C M ^b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

High k dielectrics; SiC devices

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC FIELDS; OPTIMIZATION; PERMITTIVITY; SILICON CARBIDE;

CHANNEL CONDUCTION; HIGH-K DIELECTRICS; OXIDE FILMS; SIC DEVICES;

MOSFET DEVICES;

EID: 8644277173     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1433     Document Type: Conference Paper

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