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Volumn 433-436, Issue , 2003, Pages 949-952

New Tunnel Schottky SiC Devices Using Mixed Conduction Ceramics

Author keywords

BaSnO3; Gas Sensor; Oxygen; Schottky Diode; SiC

Indexed keywords

BARIUM COMPOUNDS; CERAMIC MATERIALS; CHEMICAL SENSORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTORS; OXYGEN; SCHOTTKY BARRIER DIODES;

EID: 0242664904     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.949     Document Type: Conference Paper
Times cited : (4)

References (13)
  • 13
    • 0004184326 scopus 로고
    • chapter 4, McGraw-Hill Series in Electrical Engineering
    • In Microelectronic Devices, Edward S. Yang, ed. 1988, chapter 4, pp. 106-109., McGraw-Hill Series in Electrical Engineering.
    • (1988) Microelectronic Devices , pp. 106-109
    • Yang, E.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.