High temperature field effect hydrogen and hydrocarbon gas sensors based on SiC MOS devices

Sensors and Actuators, B: Chemical

Volumn 133, Issue 2, 2008, Pages 705-716

  Trinchi, Adrian ^a   Kandasamy, Sasikaran ^b   Wlodarski, Wojtek ^b  

^a CSIRO   (Australia)

^b RMIT UNIVERSITY   (Australia)

Author keywords

Capacitor; FET; Gas; Metal oxide semiconductor; MOSFET; Review; Schottky diode; Sensing; Sensor; Silicon carbide; Transistor

Indexed keywords

AMPLIFICATION; CHARGE COUPLED DEVICES; DETECTORS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; FLOW INTERACTIONS; GAS DETECTORS; GAS SENSING ELECTRODES; GASES; HYDROCARBONS; HYDROGEN; MECHANISMS; METALLIC COMPOUNDS; METALS; NONMETALS; ORGANIC COMPOUNDS; RESEARCH; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SENSORS; SIGNAL PROCESSING; SILICON; SILICON CARBIDE;

CATALYTIC METALS; CURRENT STATUS; ELECTRICAL (ELECTRONIC) PROPERTIES; EVOLUTION (CO); FIELD EFFECTS; GAS INTERACTION; GAS SENSING; HIGH SENSITIVITY (HS); HIGH TEMPERATURE (HT); HIGH TEMPERATURE FIELD; HYDROCARBON GAS SENSORS; HYDROCARBON SENSORS; HYDROGEN GASES; METAL-OXIDE SEMICONDUCTOR (MOS); NOVEL STRUCTURES; OPERATING TEMPERATURES; OXIDE LAYERS; RE SEARCH GROUP; RESEARCH EFFORTS; SENSING PERFORMANCE; SENSING PLATFORMS; SIGNAL AMPLIFICATION (SA); SILICON CARBIDE (SIC);

MOS DEVICES;

EID: 47649096068     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2008.03.011     Document Type: Review

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