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Solid-State Electronics
Volumn 39, Issue 10, 1996, Pages 1409-1422
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

(2)  Casady, J B a   Johnson, R W a  

a NONE
Author keywords

[No Author keywords available]
Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ENERGY GAP; HIGH TEMPERATURE APPLICATIONS; INTEGRATED CIRCUITS; PERFORMANCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SENSORS; SOLID STATE RECTIFIERS; TRANSISTORS;
EID: 0030268828     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00045-7     Document Type: Review
Times cited : (1349)
References (256)
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