Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes

Sensors and Actuators, B: Chemical

Volumn 117, Issue 1, 2006, Pages 151-158

  Huang, Jun Rui ^a   Hsu, Wei Chou ^a   Chen, Yeong Jia ^a   Wang, Tzong Bin ^a   Lin, Kun Wei ^b   Chen, Huey Ing ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

Author keywords

Adsorption; Hydrogen sensor; Schottky barrier height variation; Schottky diode; Transient response

Indexed keywords

ADSORPTION; CHEMICAL SENSORS; DESORPTION; ELECTRIC POTENTIAL; THERMAL EFFECTS;

HYDROGEN SENSOR; SCHOTTKY BARRIER HEIGHT VARIATION; TRANSIENT RESPONSE;

SCHOTTKY BARRIER DIODES;

EID: 33745713703     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2005.11.020     Document Type: Article

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