Role of oxygen in high temperature hydrogen sulfide detection using MISiC sensors

Measurement Science and Technology

Volumn 19, Issue 2, 2008, Pages

  Weng, Ming Hung ^a   Mahapatra, Rajat ^a   Wright, Nick G ^a   Horsfall, Alton B ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Claus reaction; Gas sensor; High temperature; High ?; Hydrogen; Hydrogen sulfide; MISiC; Oxygen; Silicon carbide; Trap assisted conduction mechanism

Indexed keywords

HIGH TEMPERATURE EFFECTS; HYDROGEN SULFIDE; OXYGEN; SILICON CARBIDE;

CLAUS REACTION; GAS CONCENTRATION; TRAP-ASSISTED CONDUCTION MECHANISM;

CHEMICAL SENSORS;

CHEMICAL SENSORS; HIGH TEMPERATURE EFFECTS; HYDROGEN SULFIDE; OXYGEN; SILICON CARBIDE;

EID: 42549105499     PISSN: 09570233     EISSN: 13616501     Source Type: Journal    
DOI: 10.1088/0957-0233/19/2/024002     Document Type: Article

References (24)

1. McGonigle A J S 2005 Volcano remote sensing with ground based spectroscopy Phil. Trans. R. Soc. A 363 2915-29
2. Hoffman J F, Oyama V I and Von Zahn U 1980 Measurements of the Venus lower atmosphere composition: a comparison of results J. Geophys. Res. 85 (A13) 7871-81
3. Johnson C M, Wright N G, Ortolland S, Morrison D J, Adachi K and O'Neill A G 1999 Proc. IEE Colloq. Recent Advances in Power Devices p 10/1
4. Neudeck P G, Spry D J, Chen L Y, Okojie R S, Beheim G M, Meredith R and Ferrier T 2007 SiC field effect transistor technology demonstrating prolonged stable operation at 500 °C Mater. Sci. Forum 556-67 831-4
5. Lloyd Spetz A, Nakagomi S and Savage S 2004 High-temperature SiC-FET chemical gas sensors Advances in Silicon Carbide Processing and Applications ed S E Saddow and A Agarwal (Boston, MA: Artech House) pp 29-63
6. Lloyd Spetz A et al 2001 SiC based field effect gas sensors for industrial applications Phys. Status Solidi a 185 15-25
7. Uneus L et al 2002 The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures Mater. Sci. Forum 389-93 1419-22
8. Svenningtorp H, Widen B, Salomonsson P, Ekedahl L G, Lundstrom I, Tobias P and Lloyd Spetz A 2001 Detection of HC in exhaust gases by an array of MISiC sensors Sensors Actuators B 77 177-85
9. Nakagomi S, Tobias P, Baranzahi A, Lundstrom I, Maretnsson P and Lloyd Spetz A 1997 Influence of carbon monoxide, water, and oxygen on high-temperature catalytic metal-oxide-silicon carbide structures Sensors Actuators B 45 183-91
10. Baranzahi A, Lloyd Spetz A, Glavno M, Carlsson C, Nytomt J, Salomonsson P, Jobson E, Häggendal B, Mrtensson P and Lundström I 1997 Response of metal-oxide-silicon carbide sensors to simulated and real exhaust gases Sensors Actuators B 43 52-9
11. Wingbrant H, Svenningstorp H, Salomonsson P, Tengstrom P, Lundstrom I and Lloyd Spetz A 2003 Using a MISiCFET device as a cold start sensor Sensors Actuators B 93 295-303
12. Hunter G W 1993 NASA Technical Memorandum 106141
13. Roccaforte B F, La Via F, Beiri A, Raineri V, Calcagno L and Mangano F 2004 Structural and electrical properties of Ni/Ti Schottky contacts on silicon carbide upon thermal annealing J. Appl. Phys. 96 4313-8
14. Tobias P, Ejakov S, Golding B and Ghosh R N 2003 Interface states in high temperature gas sensors based on silicon carbide IEEE Sensors J 2 543-7
15. Ghosh R N, Tobias P and Golding B 2003 Influence of interface states on high temperature SiC sensors and electronics Mater. Res. Soc. Symp. Proc. 742 363-70
16. Savage S M, Konstantinov A, Saroukhan A M and Harris C I 2000 High temperature 4H-SiC FET for gas sensing applications Mater. Sci. Forum 338-342 1431-4
17. 2 high-k gate dielectric stack on 4H-SiC substrate J. Vac. Sci. Technol. B 25 217
18. Uneus L, Artursson T, Mattsson M, Ljung P, Wigren R, Martensson P, Holmberg M, Lundstrom I and Lloyd Spetz A 2005 Evaluation of on-line flue gas measurements by MISiCFET and metal-oxide sensors in boilers IEEE Sensor J. 5 75-81
19. Hunter G W, Neudeck P G, Gray M, Androjna D, Chen L Y, Hoffman R W Jr, Liu C C and Wu Q H 2000 SiC-based gas sensor development Mater. Sci. Forum 338-42 1439-42
20. 2/SiC capacitors at high temperatures IEEE Sensors J. 7 1395-9
21. 3-based thin layers J. Appl. Phys. 98 044312
22. Horsfall A B, Weng M H, Mahapatra R and Wright N G 2007 Trap assisted gas sensing mechanism in MISiC capacitors Mater. Sci. Forum 556-557 621-6
23. Fang Y K, Hwang S B, Lin C Y and Lee C C 1990 Trench Pd/Si metal-oxide-semiconductor Schottky barrier diodes for a high sensitivity hydrogen gas sensor Appl. Phys. Lett. 57 2686-8
24. 2 on some oxides Appl. Catal. A 244 93-100