Fabrication of SiC hydrogen sensor by Pd-implantation

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Muntele, C I ^a   Ila, D ^a   Williams, E K ^a   Poker, D B ^c   Hensley, D K ^c   Larkin, David J ^b   Muntele, Iulia ^a  

^a ALABAMA A AND M UNIVERSITY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HIGH TEMPERATURE PROPERTIES; HYDROGEN; ION IMPLANTATION; PALLADIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SURFACE CHEMISTRY;

SEMICONDUCTOR SENSORS;

CHEMICAL SENSORS;

EID: 0343006657     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

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2. G. Muller, G. Krotz, E. Niemann, SiC for sensors and high-temperature electronics, Sensors and Actuators, A, 43, 1-3 (1994) 259-268.
3. M. A. George, M. A. Ayoub, D. Ila, D. J. Larkin, Elevated temperature silicon carbide chemical sensors, Spring MRS Meeting, San Francisco, 1999.
4. J. F. Ziegler, J. P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids (Pergamon Press, NY, 1985).
5. G. W. Hunter, P. G. Neudeck, L. Y. Chen, D. Knight, C. C. Liu, Q. H. Wu, AIAA 95-2647, Joint Propulsion Conference and Exhibit, 1995, San Diego, CA.
6. th Meeting of the Electron Society, 1996, San Antonio, TX.