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Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 358-366

Electrical properties of SiC: Characterisation of bulk crystals and epilayers

(1) Irmscher, K a

a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

Author keywords

Doping effects; Electrical measurements; Electron paramagnetic resonance; Silicon carbide

Indexed keywords

CAPACITANCE; CRYSTAL IMPURITIES; CRYSTAL LATTICES; CRYSTALS; ELECTRIC POTENTIAL; PARAMAGNETIC RESONANCE; SEMICONDUCTOR DOPING;

EPITAXIAL LAYERS;

SILICON CARBIDE;

EID: 0037197449 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)01071-6 Document Type: Conference Paper

Times cited : (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.