Normally-off 4H-SiC power MOSFET with submicron gate

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 1115-1118

  Yamashita, Kenya ^a   Egashira, Kyoko ^a   Hashimoto, Koichi ^a   Takahashi, Kunimasa ^a   Kusumoto, Osamu ^a   Utsunomiya, Kazuya ^a   Hayashi, Masashi ^a   Uchida, Masao ^a   Kudo, Chiaki ^a   Kitabatake, Makoto ^a   Hashimoto, Shin ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

4H SiC; MOSFET; Normally off; Self aligned process; Submicron gate

Indexed keywords

ELECTRIC BREAKDOWN; HIGH TEMPERATURE APPLICATIONS; SILICON CARBIDE;

4H-SIC; MOS-FET; NORMALLY OFF; SELF ALIGNED PROCESS; SUBMICRON GATE;

POWER MOSFET;

EID: 63849303250     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (5)

1. N. S. Saks, S. S. Mani, and A. K. Agarwal: Applied Physics Letters 76, (2000), p. 2250
2. Sei-Hyung Ryu et al.: Mater. Sci. Forum, Vols. 527-529, (2006), p. 1261
3. N. S. Saks et al.: Mater. Sci. Forum, Vols. 457-460, (2004), p. 1287
4. T. Yokogawa et al.: Mater. Sci. Forum, Vols. 389-393, (2002), p. 1077
5. T. Kimoto, S. Nakazawa, K. Hashimoto, and H. Matsunami: Applied Physics Letters 79, (2001), p. 271