Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

Applied Physics Letters

Volumn 91, Issue 20, 2007, Pages

  Tanner, Carey M ^a   Perng, Ya Chuan ^a   Frewin, Christopher ^b   Saddow, Stephen E ^b   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of South Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC LAYER DEPOSITION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; HYDROGEN; MOS CAPACITORS; SILICON CARBIDE;

THERMAL ATOMIC LAYERS; TUNNELING MECHANISMS;

GATE DIELECTRICS;

EID: 36248970008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2805742     Document Type: Article

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