Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 551-556

  Fissel, A ^a   Czernohorsky, M ^a   Osten, H J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

C V measurements, I V measurements; Gd2O3; High K dielectrics; MBE; RHEED; SiC; XRD

Indexed keywords

CRYSTAL GROWTH; DIELECTRIC PROPERTIES; GADOLINIUM COMPOUNDS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

HEXAGONAL STRUCTURES; HIGH-K DIELECTRICS; MONOCLINIC STRUCTURES;

CRYSTALLINE MATERIALS;

EID: 33845205026     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.07.002     Document Type: Article

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