Aluminium nitride deposition on 4H-SiC by means of physical vapour deposition

Thin Solid Films

Volumn 515, Issue 2 SPEC. ISS., 2006, Pages 456-459

  Wolborski, Maciej ^a   Rosén, Daniel ^b   Hallén, Anders ^a   Bakowski, Mietek ^a,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

AlN; Passivation; SiC; Silicon carbide

Indexed keywords

ALUMINUM NITRIDE; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ETCHING; HYSTERESIS; LEAKAGE CURRENTS; PASSIVATION; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DIODES; ULTRAVIOLET RADIATION;

METAL-INSULATOR-SEMICONDUCTOR (MIS); N-TYPE 4H-SIC SAMPLES; P-TYPE 4H-SIC SAMPLES; REVERSE CURRENT;

SILICON CARBIDE;

EID: 33748762749     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.261     Document Type: Article

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