Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition

Journal of Applied Physics

Volumn 101, Issue 12, 2007, Pages

  Wolborski, MacIej ^a   Rooth, Mårten ^b   Bakowski, Mietek ^a,c   Halĺn, Anders ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIODES; ELECTRIC BREAKDOWN; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); PERMITTIVITY;

CURRENT CONDUCTION; HAFNIUM OXIDE FILMS; NONPASSIVATED DEVICES; STACKED FILMS;

THIN FILMS;

EID: 34547425844     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734956     Document Type: Article

References (30)

1. R. Singh, Microelectron. Reliab. 0026-2714 10.1016/j.microrel.2005.10.013 46, 713 (2006).
2. L. A. Lipkin and J. W. Palmour, IEEE Trans. Electron Devices 0018-9383 10.1109/16.748872 46, 525 (1999).
3. M. Houssa, L. Pantisanoa, L. -A. Ragnarssona, R. Degraevea, T. Schrama, G. Pourtoisa, S. De Gendta, G. Groesenekena, and M. M. Heyns, Mater. Sci. Eng. 51, 37 (2006). 0025-5416
4. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 10.1063/1.1361065 89, 5243 (2001).
5. M. Wolborski, M. Bakowski, A. Ortiz, V. Pore, A. Schöner, M. Ritala, M. Leskelä, and A. Halĺn, Microelectron. Reliab. 46, 743 (2006).
6. M. Wolborski, D. Rośn, A. Halĺn, and M. Bakowski, Thin Solid Films 515, 456 (2005).
7. M. Wolborski, M. Bakowski, V. Pore, M. Ritala, M. Leskelä, A. Schöner, and A. Halĺn, Mater. Sci. Forum 483-485, 701 (2005).
8. K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskelä, Thin Solid Films 0040-6090 10.1016/S0040-6090(02)00612-0 416, 72 (2002).
9. J. Niinistö, M. Putkonen, L. Niinistö, S. L. Stoll, K. Kukli, T. Sajavaara, M. Ritala, and M. Leskelä, J. Mater. Chem. 0959-9428 10.1039/b417866c 15, 2271 (2005).
10. K. Forsgren, A. Hrsta, J. Aarik, A. Aidla, J. Westlinder, and J. Olsson, J. Electrochem. Soc. 0013-4651 10.1149/1.1504720 149, F139 (2002).
11. J. Robertson, J. Non-Cryst. Solids 0022-3093 10.1016/S0022-3093(02)00972- 9 303, 94 (2002).
12. V. V. Afanas'ev, A. Stesmans, F. Chen, S. A. Campbell, and R. Smith, Appl. Phys. Lett. 0003-6951 10.1063/1.1538310 82, 922 (2003).
13. J. Sundqvist, A. Tarre, A. Rosental, and A. Hrsta, Chem. Vap. Deposition 0948-1907 10.1002/cvde.200290002 9, 21 (2003).
14. R. E. Hann, P. R. Suitch, and J. L. Pentecost, J. Am. Ceram. Soc. 68, C-285 (1985).
15. J. Haines, J. M. Ĺger, S. Hull, J. P. Petitet, A. S. Pereira, C. A. Perottoni, and J. A. H. da Jornada, J. Am. Ceram. Soc. 80, 1910 (1997).
16. M. -H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, S. W. Nahm, D. H. Ko, J. H. Lee, N. I. Lee, and K. Fujihara, Appl. Phys. Lett. 0003-6951 10.1063/1.1487923 81, 472 (2002).
17. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), Chap., p. 136.
18. Z. Xu, L. Pantisano, A. Kerber, R. Degraeve, E. Cartier, S. De Gendt, M. Heyns, and G. Groeseneken, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2003.822343 51, 402 (2004).
19. D. Heh, Ch. D. Young, G. A. Brown, P. Y. Hung, A. Diebold, G. Bersuker, E. M. Vogel, and J. B. Bernstein, Appl. Phys. Lett. 0003-6951 10.1063/1.2195896 88, 152907 (2006).
20. K. I. Lundström and C. M. Svensson, IEEE Trans. Electron Devices 19, 826 (1972).
21. M. Copel and M. C. Reuter, Appl. Phys. Lett. 0003-6951 10.1063/1.1621734 83, 3398 (2003).
22. S. Sayan, E. Garfunkel, T. Nishimura, W. H. Schulte, T. Gustafsson, and G. D. Wilk, J. Appl. Phys. 0021-8979 10.1063/1.1578525 94, 928 (2003).
23. M. Gutowski, J. E. Jaffe, Ch. -L. Liu, M. Stoker, R. I. Hedge, R. S. Rai, and Ph. J. Tobin, Appl. Phys. Lett. 0003-6951 10.1063/1.1458692 80, 1897 (2002).
24. P. Punchaipetch, G. Pant, M. A. Quevedo-Lopez, C. Yao, M. El-Bouanani, M. J. Kim, R. M. Wallace, and B. E. Gnade, IEEE J. Sel. Top. Quantum Electron. 1077-260X 10.1109/JSTQE.2004.824109 10, 89 (2004).
25. B. -Y. Tsui and H. -W. Chang, J. Appl. Phys. 0021-8979 10.1063/1.1574594 93, 10119 (2003).
26. C. Essary, J. M. Howard, V. Craciun, D. Craciun, and R. K. Singh, Thin Solid Films 0040-6090 10.1016/j.tsf.2003.10.048 450, 111 (2004).
27. J. -Ch. Lee, S. -J. Oh, M. Cho, Ch. S. Hwang, and R. Jung, Appl. Phys. Lett. 0003-6951 10.1063/1.1645984 84, 1305 (2004).
28. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
29. D. S. Jeong, H. B. Park, and Ch. S. Hwang, Appl. Phys. Lett. 0003-6951 10.1063/1.1865326 86, 072903 (2005).
30. T. -H. Perng, Ch. -H. Chien, Ch. -W. Chen, P. Lehnen, and Ch. -Y. Chang, Thin Solid Films 469-470, 345 (2004).