Structural and optical properties of epitaxial ZnO thin films on 4H-SiC (0 0 0 1) substrates prepared by pulsed laser deposition

Journal of Alloys and Compounds

Volumn 489, Issue 1, 2010, Pages 179-182

  Kim, Ji Hong ^a   Cho, Dae Hyung ^a   Lee, Wonyong ^a   Moon, Byung Moo ^a   Bahng, Wook ^b   Kim, Sang Cheol ^b   Kim, Nam Kyun ^b   Koo, Sang Mo ^c  

^a Korea University   (South Korea)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

^c Kwangwoon University   (South Korea)

Author keywords

Crystal growth; Luminescence; Thin films; X ray diffraction

Indexed keywords

4H-SIC SUBSTRATE; CRYSTALLINE QUALITY; CRYSTALLINITIES; DEEP LEVEL; EPITAXIALLY GROWN; GREEN-BAND EMISSION; IN-PLANE RELATIONSHIP; LATTICE ROTATIONS; NEAR BAND EDGE; PHOTOLUMINESCENCE MEASUREMENTS; PL MEASUREMENTS; ROOM TEMPERATURE; SIC(0 0 0 1); STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURED SUBSTRATE; SUBSTRATE TEMPERATURE; TEMPERATURE DEPENDENT; ULTRA-VIOLET; VARIOUS SUBSTRATES; XRD ANALYSIS; ZNO; ZNO FILMS; ZNO THIN FILM;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTALLIZATION; DEPOSITION; DIFFRACTION; EPITAXIAL FILMS; FILM PREPARATION; GRAIN BOUNDARIES; LATTICE MISMATCH; LIGHT; LUMINESCENCE; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON CARBIDE; SULFUR COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

SUBSTRATES;

EID: 70849084238     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.09.048     Document Type: Article

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