Electron beam induced orientation selective epitaxial growth of CeO2 (1 0 0) layers on Si(1 0 0) substrates

Journal of Crystal Growth

Volumn 304, Issue 1, 2007, Pages 1-3

  Inoue, Tomoyasu ^a   Saito, Tomohiro ^a   Shida, Shigenari ^a  

^a IWAKI MEISEI UNIVERSITY   (Japan)

Author keywords

A1. Characterization; A1. Crystal morphology; A1. Defects; A3. Selective epitaxy; B1. Oxides; B2. Dielectric materials

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DIELECTRIC MATERIALS; ELECTRON BEAMS; EPITAXIAL GROWTH; MAGNETRON SPUTTERING; OXIDES; SILICON; SUBSTRATES;

CRYSTAL MORPHOLOGY; PREFERENTIAL GROWTH; SELECTIVE EPITAXY;

CERIUM COMPOUNDS;

EID: 34247648639     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.02.013     Document Type: Article

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