Effects of thermal nitrided gate-oxide thickness on 4H silicon-carbide- based metal-oxide-semiconductor characteristics

Applied Physics Letters

Volumn 90, Issue 1, 2007, Pages

  Cheong, Kuan Yew ^a   Bahng, Wook ^b   Kim, Nam Kyun ^b  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRON TRAPS; SILICON CARBIDE; THERMAL EFFECTS;

GATE-OXIDE THICKNESS; INTERFACE-TRAP DENSITY;

MOSFET DEVICES;

EID: 33846086952     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2430308     Document Type: Article

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