Electrical properties of the la2O3 /4H-SiC interface prepared by atomic layer deposition using La(iPrCp)3 and H 2O

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1083-1086

  Moon, Jeong Hyun ^a   Eom, Da Ii ^a   No, Sang Yong ^a   Song, Ho Keun ^a   Yim, Jeong Hyuk ^a   Na, Hoon Joo ^a   Lee, Jae Bin ^b   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

^b Korea Sangshin Electronic Co Ltd   (South Korea)

Author keywords

4H SiC; ALD (atomic layer deposition); Lanthanum oxide (La2O3)

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; CURRENT DENSITY; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; WATER;

LANTHANUM OXIDE; LEAKAGE CURRENT DENSITY;

LANTHANUM COMPOUNDS;

EID: 34247531815     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1083     Document Type: Conference Paper

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