High carrier density CeO2 dielectrics-implications for MOS devices

Journal of the European Ceramic Society

Volumn 24, Issue 6, 2004, Pages 1459-1462

  Lappalainen, Jyrki ^a,b   Kek, Darja ^b,c   Tuller, Harry L ^b  

^a UNIVERSITY OF OULU   (Finland)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Capacitor; CeO2; Electrical properties; Films; Microstructure

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CERIUM COMPOUNDS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; NANOSTRUCTURED MATERIALS; PULSED LASER DEPOSITION; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GATE DIELECTRICS;

MOS DEVICES;

MICROSTRUCTURE;

EID: 0942299901     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(03)00578-8     Document Type: Article

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