Effects of wet N 2O oxidation on interface properties of 6H-SiC MOS capacitors

IEEE Electron Device Letters

Volumn 23, Issue 7, 2002, Pages 410-412

  Lai, P T ^a,b   Xu, J P ^c   Chan, C L ^b  

^a IEEE   (Hong Kong)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

^c HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Interface state density; MOS capacitors; Silicon carbide; Wet N 2O oxidation

Indexed keywords

DRY OXIDATION; INTERFACE STATE DENSITY; OXYNITRIDES; WET OXIDATION;

CAPACITANCE MEASUREMENT; COMPOSITION EFFECTS; INTERFACES (MATERIALS); MOS CAPACITORS; NITRIDES; OXIDATION; VOLTAGE MEASUREMENT;

SILICON CARBIDE;

EID: 0036646896     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1015220     Document Type: Article

References (15)

1. Nitridation of silicon-dioxide films grown on 6H silicon carbide
2. 2O nitrided oxides grown on Si and SiC substrates
3. 2 grown on SiC by rapid thermal processing
4. Effects of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
5. 2 grown on p-type 4H-SiC
6. 2O-grown oxynitride on 6H-SiC
7. MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC
8. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
9. Silica films on silicon carbide: A review of electrical properties and device applications
10. 2/SiC MOS system and MOSFETs
11. Influence of the post-oxidation process on the MOS interface and MOSFETs properties
12. SIMS analysis of nitrided oxides grown on 4H-SiC
13. MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation