Effect of post-oxidation annealing on high-temperature grown SiO 2/4H-SiC interface

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 731-734

  Moon, Jeong Hyun ^a   Cheong, Kuan Yew ^b   Song, Ho Keun ^a   Yim, Jeong Hyuk ^a   Oh, Myeong Sook ^a   Lee, Jong Ho ^a   Bahng, Wook ^c   Kim, Nam Kyun ^c   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

^b SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^c Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

4H SiC; High temperature oxidation; Interface trap density (Dit)

Indexed keywords

NITRIC OXIDE; SILICA; SILICON CARBIDE; THERMOOXIDATION;

4H-SIC; DRY OXIDE; HIGH TEMPERATURE; INTERFACE TRAP DENSITY; POST-OXIDATION ANNEALING;

SILICON OXIDES;

EID: 63849198538     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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