SCOPUS 정보 검색 플랫폼

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 837-840

Effects of post-deposition annealing on CeO2 gate prepared by metal-organic decomposition (MOD) method on 4H-SiC

(5) Lim, Way Foong a Cheong, Kuan Yew a Lockman, Zainovia a Jasni, Farah Ainis a Quah, Hock Jin a

a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING (Malaysia)

Author keywords

Effective oxide charge; High k dielectric; Interface trap density; Slow trap density

Indexed keywords

ANNEALING; CERIUM OXIDE; DECOMPOSITION; DEPOSITION; HIGH-K DIELECTRIC; ORGANOMETALLICS;

ARGON AMBIENT; EFFECTIVE OXIDE CHARGE; HIGHEST TEMPERATURE; INTERFACE TRAP DENSITY; METALORGANIC DECOMPOSITION METHOD; OXIDE PROPERTIES; POST DEPOSITION ANNEALING; TRAP DENSITY;

SILICON CARBIDE;

EID: 77950927168 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.645-648.837 Document Type: Conference Paper

Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.