Engineering epitaxial γ -Al2 O3 gate dielectric films on 4H-SiC

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  Tanner, Carey M ^a   Toney, Michael F ^b   Lu, Jun ^c   Blom, Hans Olof ^c   Sawkar Mathur, Monica ^a   Tafesse, Melat A ^a   Chang, Jane P ^a  

^a Engineering IV   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CURRENT DENSITY; EPITAXIAL FILMS; FILM THICKNESS; GATE DIELECTRICS; LEAKAGE CURRENTS; MOS CAPACITORS; SILICON CARBIDE; STRAIN;

DEVICE INTEGRATION; LEAKAGE CURRENT DENSITY;

DIELECTRIC FILMS;

EID: 36749048193     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2812609     Document Type: Article

References (42)

1. M. Bhatnagar and B. J. Baliga, IEEE Trans. Electron Devices 0018-9383 10.1109/16.199372 40, 645 (1993).
2. A. Elasser and T. P. Chow, Proc. IEEE 0018-9219 10.1109/JPROC.2002. 1021562 90, 969 (2002).
3. C. E. Weitzel, J. W. Palmour, C. H. Carter, Jr., K. Moore, K. J. Nordquist, S. Allen, C. Thero, and M. Bhatnagar, IEEE Trans. Electron Devices 0018-9383 10.1109/16.536819 43, 1732 (1996).
4. G. L. Harris, Properties of Silicon Carbide (INSPEC, London, 1995).
5. J. Cooper, M. R. Melloch, R. Singh, A. Agarwal, and J. W. Palmour, IEEE Trans. Electron Devices 0018-9383 10.1109/16.992876 49, 658 (2002).
6. M. K. Das, Mater. Sci. Forum 457-460, 1275 (2004).
7. S. Dhar, L. C. Feldman, S. Wang, T. Isaacs-Smith, and J. R. Williams, J. Appl. Phys. 0021-8979 10.1063/1.1938270 98, 014902 (2005).
8. R. Singh, Microelectron. Reliab. 0026-2714 10.1016/j.microrel.2005.10.013 46, 713 (2006).
9. L. A. Lipkin and J. W. Palmour, IEEE Trans. Electron Devices 0018-9383 10.1109/16.748872 46, 525 (1999).
10. S. E. Saddow and A. Agarwal, Advances in Silicon Carbide Processing and Applications (Artech House, Norwood, MA, 2004).
11. V. V. Afanas'ev, F. Ciobanu, S. Dimitrijev, G. Pensl, and A. Stesmans, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/16/17/019 16, S1839 (2004).
12. V. V. Afanas'ev, A. Stesmans, B. J. Mrstik, and C. Zhao, Appl. Phys. Lett. 0003-6951 10.1063/1.1501163 81, 1678 (2002).
13. M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, and S. Y. Wu, Mater. Res. Soc. Symp. Proc. 811, 275 (2004).
14. C. Merckling, M. El-Kazzi, G. Delhaye, M. Gendry, G. Saint-Girons, and G. Hollinger, Appl. Phys. Lett. 0003-6951 10.1063/1.2403902 89, 232907 (2006).
15. T. Schroeder, T. -L. Lee, L. Libralesso, E. Joumard, J. Zegenhagen, P. Zaumseil, C. Wenger, G. Lupina, G. Lippert, J. Dabrowski, and H. -J. Mussig, J. Appl. Phys. 0021-8979 10.1063/1.1883304 97, 074906 (2005).
16. K. Y. Gao, T. Seyller, L. Ley, F. Ciobanu, G. Pensl, A. Tadich, J. D. Riley, and R. G. C. Leckey, Appl. Phys. Lett. 0003-6951 10.1063/1.1609053 83, 1830 (2003).
17. I. Levin and D. Brandon, J. Am. Ceram. Soc. 81, 1995 (1998). 0002-7820
18. A. T. Fiory, J. Electron. Mater. 0361-5235 10.1007/s11664-002-0031-9 31, 981 (2002).
19. E. San Andres, A. del Prado, I. Martil, G. Gonzalez-Diaz, and F. L. Martinez, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1585067 21, 1306 (2003).
20. K. Y. Cheong and N. K. Kim, Microelectron. Eng. 83, 65 (2006).
21. C. M. Tanner, M. Sawkar-Mathur, M. F. Toney, J. Lu, H. -O. Blom, and J. P. Chang, Appl. Phys. Lett. 0003-6951 10.1063/1.2435978 90, 061916 (2007).
22. V. I. Trofimov, I. V. Trofimov, and J. -I. Kim, Thin Solid Films 0040-6090 10.1016/j.tsf.2005.08.221 495, 398 (2006).
23. E. H. G. Backus, J. Chem. Phys. 0021-9606 10.1063/1.1760737 121, 1038 (2004).
24. R. Pascual, M. Sayer, A. Lo, S. Herbert, L. C. Rolim, and N. Townley, J. Appl. Phys. 0021-8979 10.1063/1.360856 79, 493 (1996).
25. H. G. Tompkins and W. A. McGahan, Spectroscopic Ellipsometry and Reflectometry (Wiley, New York, 1999).
26. B. E. Warren, X-ray Diffraction (Addison-Wesley, Reading, MA, 1969).
27. N. Sridhar, Acta Mater. 1359-6454 10.1016/1359-6454(96)00059-6 44, 4097 (1996).
28. N. Onojima, J. Kaido, J. Suda, T. Kimoto, and H. Matsunami, Mater. Sci. Forum 457-460, 1569 (2004).
29. M. Wolborski, D. Rosen, A. Hallen, and M. Bakowski, Thin Solid Films 0040-6090 10.1016/j.tsf.2005.12.261 515, 456 (2006).
30. V. V. Afanas'ev, A. Stesmans, F. Chen, S. A. Campbell, and R. Smith, Appl. Phys. Lett. 0003-6951 10.1063/1.1538310 82, 922 (2003).
31. A. Fissel, M. Czernohorsky, and H. J. Osten, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2214702 24, 2115 (2006).
32. A. Perez-Tomas, P. Godignon, J. Montserrat, J. Millan, N. Mestres, P. Vennegues, and J. Stoemenos, J. Electrochem. Soc. 0013-4651 10.1149/1.1861995 152, G259 (2005).
33. R. Mahapatra, A. K. Chakraborty, N. Poolamai, A. Horsfall, S. Cattopadhyay, N. G. Wright, K. S. Coleman, P. G. Coleman, and C. P. Burrows, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2433976 25, 217 (2007).
34. A. Paskaleva, R. R. Ciechonski, M. Syvajarvi, E. Atanassova, and R. Yakimova, J. Appl. Phys. 0021-8979 10.1063/1.1938267 97, 124507 (2005).
35. S. -W. Huang and J. -G. Hwu, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2004.837376 51, 1877 (2004).
36. K. Y. Cheong, J. H. Moon, D. Eom, H. J. Kim, W. Bahng, and N. -K. Kim, Electrochem. Solid-State Lett. 1099-0062 10.1149/1.2400728 10, H69 (2007).
37. A. Agarwal, S. Seshadri, and L. B. Rowland, IEEE Electron Device Lett. 0741-3106 10.1109/55.644081 18, 592 (1997).
38. H. -F. Li, S. Dimitrijev, D. Sweatman, and H. B. Harrison, Microelectron. Reliab. 0026-2714 10.1016/S0026-2714(99)00234-6 40, 283 (2000).
39. C. M. Tanner, Y.-C. Perng, C. Frewin, S. E. Saddow, and J. P. Chang, Appl. Phys. Lett. 91, 203510 (2007).
40. W. A. Johnson and R. F. Mehl, Trans. Am. Inst. Min., Metall. Pet. Eng. 135, 416 (1939).
41. M. Avrami, J. Chem. Phys. 0021-9606 10.1063/1.1750872 9, 177 (1941).
42. A. N. Kolmogorov, Izv. Akad. Nauk SSSR [Khim] 1, 416 (1937). 0002-3353