Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC

Applied Physics Letters

Volumn 91, Issue 15, 2007, Pages

  Rozen, John ^a,b   Dhar, Sarit ^f   Pantelides, S T ^f   Feldman, L C ^f   Wang, Sanwu ^c   Williams, J R ^d   Afanas'Ev, V V ^e  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c UNIVERSITY OF TULSA   (United States)

^d AUBURN UNIVERSITY   (United States)

^e UNIVERSITY OF LEUVEN   (Belgium)

^f NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DEFECTS; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTOR DEVICES; SILICON CARBIDE;

INTERFACE DEFECTS; INTERFACE STATE GENERATION; NEGATIVE CHARGE; SEMICONDUCTOR CAPACITORS;

SEMICONDUCTOR GROWTH;

EID: 35348856549     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2790374     Document Type: Article

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