Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Rozen, John ^a,e   Dhar, Sarit ^a,f   Zvanut, M E ^b   Williams, J R ^c   Feldman, L C ^a,d  

^a VANDERBILT UNIVERSITY   (United States)

^b UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^c AUBURN UNIVERSITY   (United States)

^d RUTGERS UNIVERSITY   (United States)

^e CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^f Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF INTERFACE STATE; ENERGY LEVEL; GATE OXIDE; HOLE TRAPPING; INTERFACE STATE; INTERFACE STATE DENSITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; N INCORPORATION; NEGATIVE BIAS TEMPERATURE INSTABILITY; NITROGEN CONTENT; NITROGEN DENSITY; NO ANNEALING; OXIDE/SEMICONDUCTOR INTERFACES; RATE EQUATIONS; SEMI-CONDUCTOR SURFACES; SILICON DEVICES; SILICON OXYNITRIDE LAYERS;

BINDING ENERGY; ELECTRON INJECTION; ELECTRON TRAPS; ELECTRONS; HOLE TRAPS; MOS CAPACITORS; MOS DEVICES; PASSIVATION; SEMICONDUCTING SILICON; SILICON CARBIDE; SILICON NITRIDE; SILICON OXIDES; SURFACE DEFECTS;

NITROGEN;

EID: 67650242358     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3131845     Document Type: Conference Paper

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