Analysis of charge conduction mechanisms in nitrided SiO2 Film on 4H SiC

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 372, Issue 4, 2008, Pages 529-532

  Cheong, Kuan Yew ^a   Bahng, Wook ^b   Kim, Nam Kyun ^b  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

Electric breakdown field; Fowler Nordheim tunneling; Poole Frenkel emission; Space charge limited

Indexed keywords

ELECTRIC FIELDS; FIELD EMISSION; SILICA; SILICON;

CHARGE CONDUCTION; NITRIDED; OXIDE THICKNESS; POOLE-FRENKEL EMISSION; POTENTIAL MECHANISM; SIO2 FILM; SPACE-CHARGE LIMITED; THREE PARAMETERS;

SILICON CARBIDE;

EID: 37649021780     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2007.07.054     Document Type: Article

References (19)

1. Zolper J.C., and Skowronski M. MRS Bull. 30 (2005) 273
2. Cheong K.Y., and Dimitrijev S. IEEE Electron Device Lett. 23 (2002) 404
3. Dimitrijev S., Harrison H.B., Tanner P., Cheong K.Y., and Han J. Properties of nitrided oxides on SiC. In: Choyke W.J., Matsunami H., and Pensl G. (Eds). Recent Major Advances in SiC (2004), Springer, Berlin 373-385
4. Cheong K.Y., Dimitrijev S., and Han J. J. Appl. Phys. 93 (2003) 5682
5. Afanas'ev V.V., Stesmans A., Ciobanu F., Pensl G., Cheong K.Y., and Dimitrijev S. Appl. Phys. Lett. 82 (2003) 568
6. Lai P.T., Chakraborty S., Chan C.L., and Cheng Y.C. Appl. Phys. Lett. 76 (2000) 3744
7. Dhar S., Feldman L.C., Chang K.-C., Cao Y., Porter L.M., Bentley J., and Williams J.R. J. Appl. Phys. 97 (2005) 074902
8. Cheong K.Y., Dimitrijev S., and Han J. IEEE Trans. Electron Devices 51 (2004) 1361
9. Cheong K.Y., Bahng W., and Kim N.-K. Appl. Phys. Lett. 90 (2007) 012120
10. Cheong K.Y., Bahng W., and Kim N.-K. Appl. Phys. Lett. 87 (2005) 212102
11. Li H.-F., Dimitrijev S., Sweatman D., and Harrison H.B. Microelectron. Reliab. 40 (2000) 283
12. Agarwal A.K., Seshadri S., and Rowland L.B. IEEE Electron Device Lett. 18 (1997) 592
13. Alok D., McLarty P.K., and Baliga B.J. Appl. Phys. Lett. 64 (1994) 2845
14. Agarwal A., Ryu S.-H., and Palmour J. Power MOSFETs in 4H-SiC: Device design and technology. In: Choyke W.J., Matsunami H., and Pensl G. (Eds). Recent Major Advances in SiC (2004), Springer, Berlin 786-837
15. Lloyd Spetz A., and Savage S. Advances in SiC field effect gas sensors. In: Choyke W.J., Matsunami H., and Pensl G. (Eds). Recent Major Advances in SiC (2004), Springer, Berlin 870-896
16. Lampert M.A., and Mark P. Current Injection in Solids (1970), Academic Press, New York
17. Rose A. Phys. Rev. 97 (1955) 1538
18. Afanas'ev V.V., Bassler M., Pensl G., and Schulz M. Phys. Status Solidi A 162 (1997) 321
19. Huang S.W., and Hwu J.G. IEEE Trans. Electron Devices 51 (2004) 1877