Interface-induced gap states and band-structure lineup at TiO2 heterostructures and Schottky contacts

Journal of Applied Physics

Volumn 107, Issue 1, 2010, Pages

  Mönch, Winfried ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BRANCH-POINT ENERGIES; COMPLEX BAND STRUCTURES; DOUBLE HETEROSTRUCTURES; ELECTRONEGATIVITY DIFFERENCE; EMPIRICAL VALUES; HETEROSTRUCTURES; INTERFACE-INDUCED GAP STATE; P-TYPE; SCHOTTKY CONTACTS; SEMICONDUCTOR HETEROSTRUCTURES; SEMICONDUCTOR INTERFACES; TIO; TWO-MATERIALS; VALENCE-BAND OFFSET; ZERO CHARGE;

CHARGE TRANSFER; CHEMICAL BONDS; CONTACTS (FLUID MECHANICS); CRYSTALS; ELECTRONEGATIVITY; ION EXCHANGE; SILICON; SILICON COMPOUNDS; VALENCE BANDS;

HETEROJUNCTIONS;

EID: 75649105386     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3275051     Document Type: Article

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