On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Mönch, Winfried ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; FORECASTING; GALLIUM ALLOYS; PALLADIUM; SCHOTTKY BARRIER DIODES; SILVER;

BARRIER HEIGHTS; CAPACITANCE VOLTAGES; EXPERIMENTAL DATUMS; GAP STATES; PREDICTED VALUES; SCHOTTKY CONTACTS; SEMI-CONDUCTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 55149108132     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3009283     Document Type: Article

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