The influence of series resistance and interface states on intersecting behavior of I-V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures

Semiconductor Science and Technology

Volumn 23, Issue 10, 2008, Pages

  Pakma, O ^a,b   Serin, N ^a   Serin, T ^a   Altindal, S ^c  

^a ANKARA UNIVERSITY   (Turkey)

^b MUGLA SITKI KOCMAN UNIVERSITY   (Turkey)

^c GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; CHARGE CARRIERS; INTERSECTIONS; LASERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SWITCHING CIRCUITS; TEMPERATURE; TEMPERATURE DISTRIBUTION;

BARRIER HEIGHT VALUES; BARRIER HEIGHTS; BIAS DEPENDENCES; EFFECT OF TEMPERATURES; ENERGY DISTRIBUTIONS; FORWARD BIASES; FREE CHARGES; IDEALITY FACTORS; INSULATOR LAYERS; INTERFACE STATES; INTERFACIAL CHARGES; LOW TEMPERATURES; METAL/SEMICONDUCTOR INTERFACES; MIS STRUCTURES; MOLECULAR RESTRUCTURING; NEGATIVE TEMPERATURES; SCHOTTKY DIODES; SERIES RESISTANCES; STANDARD DEVIATIONS; TEMPERATURE DEPENDENCES; TEMPERATURE RANGES; TEMPERATURE REGIONS; V CURVES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 56349099251     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/10/105014     Document Type: Article

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