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Volumn 70, Issue 12, 2004, Pages

Theoretical investigation of the valence-band offset between Si(001) and SiO2

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; METAL OXIDE; OXIDE; SILICON; SILICON DIOXIDE;

EID: 19744382028     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.125322     Document Type: Article
Times cited : (24)

References (45)
  • 29
    • 9744285950 scopus 로고    scopus 로고
    • note
    • A correction is needed for the LDOS VBO since the LDOS silicon gap is 0.4 eV larger than the theoretical gap. We add 0.2 eV to the VBO in the value reported in the text.
  • 33
    • 27744460065 scopus 로고
    • G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993); ibid. 49, 14251 (1994).
    • (1994) Phys. Rev. B , vol.49 , pp. 14251
  • 35
    • 0030190741 scopus 로고    scopus 로고
    • G. Kresse and J. Furthmuller, Comput. Mater. Svci. 6, 15 (1995); Phys. Rev. B 55, 11 169 (1996).
    • (1996) Phys. Rev. B , vol.55
  • 40
    • 9744222083 scopus 로고    scopus 로고
    • note
    • The interfacial dipole is not well defined and depends on the choice of reference. Reasonable references can be chosen but these choices are not unique; see Ref. 19 for a more detailed discussion.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.