Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy

Applied Physics Letters

Volumn 70, Issue 18, 1997, Pages 2407-2409

  Ding, S A ^a   Barman, S R ^a   Horn, K ^a   Yang, H ^b,c   Yang, B ^b   Brandt, O ^b   Ploog, K ^b  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LEVELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; VALENCE BAND DISCONTINUITY;

HETEROJUNCTIONS;

EID: 0031554251     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118886     Document Type: Article

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