Band alignment of atomic layer deposited (ZrO2)x(SiO 2)1-x gate dielectrics on Si(100)

Applied Physics Letters

Volumn 94, Issue 21, 2009, Pages

  Tahir, Dahlang ^a,d   Lee, Eun Kyoung ^a   Oh, Suhk Kun ^a   Tham, Tran Thi ^a   Kang, Hee Jae ^a   Jin, Hua ^b   Heo, Sung ^c   Park, Ju Chul ^c   Chung, Jae Gwan ^c   Lee, Jae Cheol ^c  

^a Chungbuk National University   (South Korea)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d HASANUDDIN UNIVERSITY   (Indonesia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BAND ALIGNMENTS; BAND GAPS; BARRIER HEIGHTS; CONDUCTION BAND OFFSET; DIELECTRIC THIN FILMS; NEAREST NEIGHBORS; REFLECTION ELECTRON ENERGY LOSS SPECTROSCOPIES; SI(1 0 0); VALENCE BAND OFFSETS; ZR SILICATES; ZRO2 THIN FILMS;

ALIGNMENT; ATOMIC SPECTROSCOPY; ATOMS; DIELECTRIC MATERIALS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MOBILITY; ENERGY DISSIPATION; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; THIN FILMS; ZIRCONIUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 66549129085     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3143223     Document Type: Article

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