Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Applied Physics Letters

Volumn 80, Issue 18, 2002, Pages 3352-3354

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Kozhukhova, E A ^a   Luo, B ^b   Kim, J ^b   Mehandru, R ^b   Ren, F ^b   Lee, K P ^b   Pearton, S J ^b   Osinsky, A V ^c   Norris, P E ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b University of Florida   (United States)

^c Corning Applied Technologies ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC SUBSTRATE; ALGAN; BAND ALIGNMENTS; BAND-OFFSET; CURRENT FLOWS; DARK-LINES; DEFECT STATE; HYDRIDE VAPOR PHASE EPITAXY; MOLE FRACTION; N-ALGAN; TYPE II;

DEFECTS; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79956045093     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1477273     Document Type: Article

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