AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fields

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 4, 1999, Pages 1674-1681

  Rizzi, Angela ^a   Della Sala, Fabio ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644451040     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590808     Document Type: Article

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