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Volumn 144-147, Issue , 2005, Pages 425-428

Valence band discontinuity at the GaN/SiC(0 0 0 1) heterojunction studied in situ by synchrotron-radiation photoelectron spectroscopy

Author keywords

Angle resolved photoelectron spectroscopy; GaN SiC heterojunction

Indexed keywords

FILM GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; RADIATION EFFECTS; SYNCHROTRONS; THIN FILMS;

ANGLE-RESOLVED PHOTOELECTRON SPECTROSCOPY (ARPES); GAN/SIC HETEROJUNCTION; VALENCE BAND OFFSET (VBO); VALENCE BANDS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17444365842 PISSN: 03682048 EISSN: None Source Type: Journal
DOI: 10.1016/j.elspec.2005.01.056 Document Type: Conference Paper

Times cited : (10)

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