Properties of isotype n-ZnO/n-GaN heterostructures studied by I-V-T and electron beam induced current methods

Journal of Physics Condensed Matter

Volumn 20, Issue 8, 2008, Pages

  Alivov, Ya I ^a   Xiao, B ^a   Akarca Biyikli, S ^a   Fan, Q ^a   Morkoc H ^a   Johnstone, D ^b   Lopatiuk Tirpak, O ^c   Chernyak, L ^c   Litton, W ^d  

^a Virginia Commonwealth University   (United States)

^b SEMETROL   (United States)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON BEAMS; THERMAL EFFECTS; ZINC OXIDE;

RADIO-FREQUENCY SPUTTERING; REVERSE CURRENT RATIO;

HETEROJUNCTIONS;

EID: 38949102960     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/8/085201     Document Type: Article

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