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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 15, 2001, Pages 1553251-1553256

Valence-band offset variation induced by the interface dipole at the SiO2/Si(111) interface

(4) Hirose, K a Sakano, K b Nohira, H b Hattori, T b

a JAPAN AEROSPACE EXPLORATION AGENCY (Japan)

b TOKYO CITY UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SILICON DIOXIDE;

ARTICLE; CALCULATION; CHEMICAL BOND; DEPOLARIZATION; DIPOLE; ELECTRON DIFFRACTION; OXIDATION; ROENTGEN SPECTROSCOPY; SEMICONDUCTOR;

EID: 0035887521 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (39)

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