High resolution photoemission study of the 6H-SiC/SiO2 interface

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 375-378

  Mattern, B ^a   Bassler, M ^a   Pensl, G ^a   Ley, L ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Interface Composition; Photoelectron Spectroscopy; Silicon Dioxide; Valence Band Offset

Indexed keywords

BAND STRUCTURE; ETCHING; INTERFACES (MATERIALS); PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SILICA; SILICON CARBIDE;

VALENCE BAND OFFSET;

SILICON WAFERS;

EID: 0031705480     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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