Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

Journal of Electronic Materials

Volumn 28, Issue 12, 1999, Pages

  King, S W ^a   Davis, R F ^a   Ronning, C ^b   Nemanich, R J ^c  

^a North Carolina State University   (United States)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; BAND STRUCTURE; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE; VALENCE BAND DISCONTINUITY;

SEMICONDUCTING FILMS;

EID: 0033281368     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0145-4     Document Type: Article

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