Band offsets and electronic structure of SiC/SiO2 interfaces

Journal of Applied Physics

Volumn 79, Issue 6, 1996, Pages 3108-3114

  Afanas'ev, V V ^a,c   Bassler, M ^a   Pensl, G ^a   Schulz, M J ^a   Von Kamienski, E Stein ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346398961     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361254     Document Type: Article

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