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Volumn 84, Issue 4, 1998, Pages 2086-2090

Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

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Indexed keywords


EID: 0000999006     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368355     Document Type: Article
Times cited : (81)

References (27)
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    • G. Martin, S. Strite, A. Botchkarev, A. Agarwal, A. Rockett, H. Morkoc, W. R. L. Lambrecht, and B. Segall, Appl. Phys. Lett. 65, 610 (1994); J. Electron. Mater. 24, 225 (1995).
    • (1995) J. Electron. Mater. , vol.24 , pp. 225
  • 15
    • 0039569180 scopus 로고    scopus 로고
    • M. B. Nardelli, K. Rapcewicz, and J. Bernholc, Phys. Rev. B 55, R7323 (1997); J. Vac. Sci. Technol. B 15, 1144 (1997).
    • (1997) J. Vac. Sci. Technol. B , vol.15 , pp. 1144
  • 18
    • 11644284027 scopus 로고
    • Ph.D. dissertation, North Carolina State University
    • J. van der Weide, Ph.D. dissertation, North Carolina State University (1994).
    • (1994)
    • Van Der Weide, J.1
  • 20
    • 11644290888 scopus 로고    scopus 로고
    • Ph.D. dissertation, North Carolina State University
    • R. S. Kern, Ph.D. dissertation, North Carolina State University (1996).
    • (1996)
    • Kern, R.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.