Electrical conduction and band offsets in Si/Hf xTi 1-xO 2/metal structures

Journal of Applied Physics

Volumn 95, Issue 12, 2004, Pages 7936-7939

  Afanas'ev, V V ^a   Stesmans, A ^a   Chen, F ^b   Li, M ^b   Campbell, S A ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; ELECTRON EXCITATIONS; THERMAL ANNEALING; THERMAL OXIDATION;

ANNEALING; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TUNNELING; FERMI LEVEL; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOS DEVICES; PHOTOCURRENTS; PHOTOEMISSION; THERMODYNAMIC STABILITY;

SEMICONDUCTING SILICON;

EID: 3142565249     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1703821     Document Type: Article

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