Fabrication of InN/Si heterojunctions with rectifying characteristics

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2794-2797

  Yoshimoto, Masahiro ^a   Yamamoto, Yoshiaki ^a   Saraie, Junji ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED; BAND ALIGNMENTS; BAND DISCONTINUITIES; INTERMEDIATE LAYERS; OXYGEN CONCENTRATIONS; RECTIFYING CHARACTERISTICS; REVERSE CURRENTS; X RAY PHOTOEMISSION SPECTROSCOPY;

PHOTOELECTRON SPECTROSCOPY; SILICON NITRIDE;

HETEROJUNCTIONS;

EID: 20644457765     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303423     Document Type: Conference Paper

References (7)

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