High structural quality InN/In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Ohashi, Tatsuo ^a   Holmström, Petter ^a   Kikuchi, Akihiko ^a   Kishino, Katsumi ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

PHOTOLUMINESCENCE EMISSIONS; PIEZOELECTRIC FIELDS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; UNSTRAINED VALENCE BAND;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33746597094     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2221869     Document Type: Article

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