Valence band offset and hole injection at the 4H-, 6H-SiC/SiO2 interfaces

Applied Physics Letters

Volumn 77, Issue 13, 2000, Pages 2024-2026

  Afanas'ev, V V ^a   Stesmans, A ^a  

^a KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344207621     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1290492     Document Type: Article

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